Fraunhofer IAF
The Fraunhofer Institute for Applied Solid State Physics IAF is one of the world's leading research institutions in the fields of III-V semiconductors and synthetic diamond. Based on these materials, Fraunhofer IAF develops components for future-oriented technologies, such as electronic circuits for innovative communication and mobility solutions, laser systems for real-time spectroscopy, novel hardware components for quantum computing as well as quantum sensors for industrial applications. With its research and development, the Freiburg research institute covers the entire value chain - from materials research, design and processing to modules, systems and demonstrators.
Within the project GEQCOS, IAF will develop a cryogenic assembly solution for the Qubit chip processors.
Sébastien Chartier received the Dr.-Ing. degree from the University of Ulm in 2009. In 2004, he joined the Institute of Electron Devices and Circuits, University of Ulm, as a member of the scientific staff. In 2007, he joined Fraunhofer IAF in Freiburg working on MMIC design for radar, communication, medical and radio astronomy applications. From 2009 to 2017, he worked at Hensoldt GmbH, Ulm, Germany as an R&D engineer. He was appointed specialist for RF system-on-chip in 2011 and Expert for system-on-chip in 2013. In 2017, he joined NXP Semiconductors Germany GmbH, Hamburg, Germany as a sub-system design leader. In 2019, he joined the Institute of Robust Power Semiconductor Systems (ILH), University of Stuttgart, Stuttgart, Germany as group leader for microwave and terahertz electronics. In 2020, he joined the Fraunhofer Institute for applied solid-state physics (IAF) in Freiburg, Germany as Head of the Business Unit “High Frequency Electronics”. Dr. Chartier was member of the technical program committee of the 2017 European Microwave Week and of the 2019 German Microwave Conference. He is an invited lecturer at the University of Stuttgart since 2020.
Laurenz John received the Master of Science degree in Electrical Engineering and Information Technologies (M.S.E.E.) from the Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany, in 2016.
He is currently a RF-design engineer and project leader with Fraunhofer IAF, Fraunhofer Institute for Applied Solid State Physics, Freiburg im Breisgau, Germany. Since 2016, he has been involved in the design and characterization of InGaAs-channel HEMT devices and integrated circuits on GaAs and Si substrates for mm-wave and sub-mm-wave frequency applications. His current research interests include IC and package design for sensing and communication applications up to 800 GHz.
